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| SUD50N03-07AP Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.007 @ VGS = 10 V 0.010 @ VGS = 4.5 V ID (A)a, b 81c 67c D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-07AP S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage a, Continuous Drain Current (TJ = 175_C)a b Symbol VDS VGS TC = 25_C TC = 100_C ID IDM IS TC = 25_C PD TJ, Tstg Limit 30 "20 81c 57c 100 25 88 8.3a, b - 55 to 175 Unit V Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipation Operating Junction and Storage Temperature Range A TA = 25_C W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Junction-to-Ambienta J ti t A bi t Junction-to-Case Steady State RthJA RthJC Symbol Typical 15 40 1.4 Maximum 18 50 1.7 Unit _C/W C/W Notes a. Surface Mounted on 1" x1" FR4 Board. b. t v 10 sec. c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 71148 S-31271--Rev. C, 16-Jun-03 www.vishay.com 1 SUD50N03-07AP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 20 50 0.007 0.011 0.010 S W 30 V 1.0 2.0 "100 1 50 nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W VDS = 15 V, VGS = 4.5 V, ID = 50 A , , VGS = 0 V, VDS = 25 V, F = 1 MHz 3720 715 370 28 12 10 11 6 50 11 25 15 100 20 ns 45 nC pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 100 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 45 100 1.5 100 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71148 S-31271--Rev. C, 16-Jun-03 SUD50N03-07AP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 6 V 200 I D - Drain Current (A) I D - Drain Current (A) 5V 100 120 Transfer Characteristics 80 150 4V 100 60 TC = 125_C 40 25_C - 55_C 50 2V 0 0 2 4 6 8 10 3V 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 120 TC = - 55_C r DS(on)- On-Resistance ( W ) 25_C 80 125_C 0.015 0.020 On-Resistance vs. Drain Current 100 g fs - Transconductance (S) 60 0.010 VGS = 4.5 V VGS = 10 V 40 0.005 20 0 0 10 20 30 40 50 0.000 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 5000 10 Gate Charge 4000 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) Ciss 8 VDS = 15 V ID = 50 A 3000 6 2000 Coss 4 1000 Crss 0 0 6 12 2 0 18 24 30 0 12 24 36 48 60 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71148 S-31271--Rev. C, 16-Jun-03 www.vishay.com 3 SUD50N03-07AP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 30 A r DS(on)- On-Resistance ( W ) (Normalized) 1.6 I S - Source Current (A) TJ = 150_C 100 Source-Drain Diode Forward Voltage 1.2 10 TJ = 25_C 0.8 0.4 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 30 1000 Limited by rDS(on) 24 I D - Drain Current (A) I D - Drain Current (A) 100 10 ms 100 ms 1 ms 10 ms 1 100 ms 1s 0.1 TA = 25_C Single Pulse 10 s 100 s, dc Safe Operating Area 18 10 12 6 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71148 S-31271--Rev. C, 16-Jun-03 |
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